2000. 5. 13 1/2 semiconductor technical data KTA1276 epitaxial planar pnp transistor revision no : 1 general purpose application. features good linearity of h fe . complementary to ktc3230. maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector (heat sink) 3. emitter to-220ab 10.30 max 15.30 max 0.80 3.60 0.20 3.00 6.70 max 13.60 0.50 5.60 max 0.50 1.50 max 2.54 4.70 max 2.60 a b c d e f g h j k l m n o p a e mm 123 f b g h l c k j o n p d 1.37 max 1.50 max r s q c t q1.50 r 9.50 0.20 s 8.00 0.20 t 2.90 max + _ + _ + _ + _ electrical characteristics (ta=25 1 ) note : h fe (1) classification o:70~140, y:120~240 characteristic symbol rating unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v collector current i c -3 a emitter current i e 3 a collector power dissipation (tc=25 1 ) p c 10 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-20v, i e =0 - - -1.0 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -1.0 a collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -30 - - v emitter base breakdown voltage v (br)ebo i e =-1ma, i c =0 -5 - - v dc current gain h fe (1) (note) v ce =-2v, i c =-0.5a 70 - 240 h fe (2) v ce =-2v, i c =-2.5a 25 - - collector-emitter saturation voltage v ce(sat) i c =-2a, i b =-0.2a - -0.3 -0.8 v base-emitter voltage v be v ce =-2v, i c =-0.5a - -0.75 -1.0 v transition frequency f t v ce =-2v, i c =-0.5a - 100 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 40 - pf
2000. 5. 13 2/2 KTA1276 revision no : 1 ambient temperature ta ( c) total power dissipation p (w) 050 t 2 10 100 150 4 6 8 infi n it e he a t sin k without heat sink collector current i (a) c -0.1 collector-emitter voltage v (v) ce safe operating area -1 -100 -0.1 -1 -3 -10 10 s 1ms 1 0ms dc oper a t i on tc=25 c *single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature i max.(plused) c i max. c (continuous) ce v =-2.0v 100 60 -0.01 h - i c collector current i (a) -0.001 -0.1 -1 -10 30 1 dc current gain h fe 300 1k fe c base saturation voltage v (v) collector current i (a) -0.001 -0.01 -0.1 c -10 -1 be(sat) -0.003 -0.03 -0.1 -0.3 -1 -3 -10 collector saturation voltage v (v) ce(sat) v ce(sat) be(sat) v i /i =10 c b collector current i (a) gain bandwidth product f (mhz) 1 -0.01 3 10 300 100 30 1k -0.03 -0.1 c -0.3 -1 t v =-5.0v ce collector base voltage v (v) f =1.0mhz t output capacitance c (pf) -1 1 10 3 30 100 300 ob -10 -3 cb -30 -60 -6 6 60 collector current i (a) -1.2 -0.4 -0.8 -20 i =-1ma collector emitter volatge v (v) -8 0-4 -4 -12 -5 -6 -16 ce -3 b -2 -1.6 -2.0 c -7 -8 -9 -10 f - i t c p - t c a i - v c ce v - i , v - i ce(sat) c be(sat) c c - v ob cb 3 6 10 -0.001 -0.01 1k 600 -100 -10 -0.01
|
